Transcend MTE710T 1TB SSD disk M.2 2280
Transcend MTE710T 1TB SSD disk M.2 2280

Transcend MTE710T 1TB SSD disk M.2 2280

od 2 555 Kč
TRANSCEND MTE710T 1TB SSD disk M.2 2280, PCIe Gen4 x4 NVMe 1.4 (3D TLC), 3800MB/s R, 3200MB/s W Transcend's M.2 SSD MTE710T features the PCI Express (PCIe) Gen 4 x4 interface and is compatible with NVM Express (NVMe) 1.4 specifications to achieve never-before-seen transfer speeds. The MTE710T features state-of-the-art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers,…
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Název produktu: Transcend MTE710T 1TB SSD disk M.2 2280
Výrobce: TRANSCEND
Minimální cena: 2 555 Kč
Maximální cena: 3 033 Kč
Ušetříte až: 478 Kč
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Popis produktu

TRANSCEND MTE710T 1TB SSD disk M.2 2280, PCIe Gen4 x4 NVMe 1.4 (3D TLC), 3800MB/s R, 3200MB/s W Transcend's M.2 SSD MTE710T features the PCI Express (PCIe) Gen 4 x4 interface and is compatible with NVM Express (NVMe) 1.4 specifications to achieve never-before-seen transfer speeds. The MTE710T features state-of-the-art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE710T is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20 °C ~ 75 °C?. Technologies: - 112-layer 3D NAND Flash - 30µ” PCB Gold Finger - Corner Bond - Extended Temperature - Wide Temperature - Dynamic Thermal Throttling - Thermal Sensor - Read Disturbance - Garbage Collection - Wear Leveling - TRIM - Bad Block Management - Power Shield (PS) - Early Move Firmware Features: - Supports NVM command - SLC caching technology - Dynamic thermal throttling - Built-in LDPC ECC (Error Correction Code) functionality - Advanced Global Wear-Leveling and Block management for reliability - Advanced Garbage Collection - Supports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devices - TRIM command for better performance - Full drive encryption with Advanced Encryption Standard (AES) (optional) Hardware Features: - Compliant with RoHS 2.0 standards - Compliant with PCI Express specification 3.1 - Compliant with NVM Express specification 1.4 - Space-saving M.2 form factor (80mm) – ideal for mobile computing devices - PCIe Gen 4 x4 interface - DDR4 DRAM Cache embedded - Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed - Key components fortified by default with Corner Bond technology - 30µ" PCB gold finger - Power Shield (PS) to ensure data transfer integrity and minimize data corruption in the drive during an abnormal power outage - Promised operational reliability in a wide temperature range (from -40°C to 85°C) - Promised operational reliability in an extended temperature range (from -20°C to 75°C) - Supports Transcend Scope Pro software Software Solutions: Control Center Improve your control by easily managing devices at anytime from edge to cloud. Scope Pro Manage / analyze data in real time and capture more of your market. One Touch Recovery Rescue your data with a click to create a reliable and robust environment. Specifications: Dimensions: 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14") Weight: 10 g Form Factor: M.2 M.2 Type: 2280-D2-M (Double-sided) Bus Interface: NVMe PCIe Gen4 x4 Flash Type: 112-layer 3D NAND flash Capacity: 1 TB Operating Voltage: 3.3V±5% Operating Temperature: Extended Temp:.-20°C ~ 75°C Storage Temperature: -55°C (-67°F) ~ 85°C (185°F) Humidity: 5% ~ 95% Shock: 1500 G, 0.5 ms, 3 axis Vibration (Operating): 20 G (peak-to-peak), 7 Hz ~ 2000 Hz (frequency) Power Consumption (Operation): 4.6 watt(s) Power Consumption (IDLE): 1.6 watt(s) Sequential Read/Write (CrystalDiskMark): - Read: up to 3,800 MB/s - Write: up to 3,200 MB/s 4K Random Read/Write (IOmeter) Read: up to 500,000 IOPS Write: up to 560,000 IOPS Mean Time Between Failures (MTBF): 5,500,000 hour(s) Terabytes Written (TBW): up to 1,700 TBW Drive Writes Per

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